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Abstracto

Thermal behavior of semiconductor bismuth tri-sulphide [Bi2S3] crystals grown by silica gel

T. K. Patil

The Bismuth Tri-Sulphide [Bi2S3] crystals have been grown in Sodium-Metasilicate gel using the single diffusion method at room temperature. The grown crystals were characterized by thermo analytical techniques (TGA, DTA, DTG and DSC), X-ray powder diffraction (XRD), By powder X-ray diffraction analysis the crystal structure is confirmed to be Orthorhombic or Rhombus, having lattice parameters a = 11.136 A°, b = 11.256 A°, and c = 3.968 A° . Thermal study reveals that Bismuth Tri-Sulphide crystal is Di-hydrous. TGA, DTA, DTG and DSC analysis shows a remarkable thermal stability.